The characteristics of leakage current mechanisms and SILC effects of Al2O3 gate dielectric
نویسندگان
چکیده
Electrical properties, current transport mechanism, and stress induced leakage current (SILC) effect of Al2O3 gate dielectric thin films deposited by reactive dc magnetron sputtering were studied. The results show that annealing in O2 ambient can effectively reduce the oxygen vacancy in Al2O3 films but may not result in additional interfacial layer form at Al2O3/Si interface. In the fresh devices there exist few interfacial traps at Al2O3/Si interface. However, negative gate bias stress can cause the generation of new interfacial traps at Al2O3/Si interface.
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